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Tuesday, July 28, 2020 | History

3 edition of Cryogenic measurements of aerojet GaAs n-JFETs found in the catalog.

Cryogenic measurements of aerojet GaAs n-JFETs

Cryogenic measurements of aerojet GaAs n-JFETs

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Published by National Aeronautics and Space Administration, Ames Research Center, National Technical Information Service, distributor in Moffett Field, Calif, [Springfield, Va .
Written in English

    Subjects:
  • Gallium arsenide semiconductors.,
  • Low temperature research.

  • Edition Notes

    StatementJohn H. Goebel and Theodore T. Weber.
    SeriesNASA technical memorandum -- 103972.
    ContributionsWeber, Theodore T., Ames Research Center.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL17680297M

      In this case (11) N E D T = (τ C η N w) − 1, where N w is the number of photogenerated carriers integrated for one integration time, t int (12) N w = η A d t int Q B. It results from the above formulas that the charge handling capacity of the readout, the integration time linked to the frame time, and dark current of the sensitive material The APS Fellow Archive is a historical record of APS Fellows, from to the present. Please note, some records are missing or incomplete. The details contained in the archive are intended to document an individual's institutional affiliation at the time of their election to Fellowship, and is not updated to reflect current ://?initial=K&year=&.

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    Comparison of the Structure and Magnetotransport Properties of Co-Ni-Cu/Cu Superlattices Electrodeposited on () and () n-GaAs Kasyutich, O. / Schwarzacher, W. / Fedosyuk, V. / Laskarzhevskiy, P. / Electrochemical Society | :CN/Thermal-Curing-of-Hydrogen.   Third, n-type GaAs devices have a donor level closer to the conduction band edge than silicon, making GaAs devices more immune to freezeout effects at 4 K. There are several GaAs technologies that can be considered for readout  › 百度文库 › 互联网.


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Cryogenic measurements of aerojet GaAs n-JFETs Download PDF EPUB FB2

The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the lowest noise readings possible and 3) with an extrinsic silicon photodetector at various detector bias voltages, to determine optimum operating Cryogenic measurements of Aerojet GaAs n-JFETs Cryogenic measurements of Aerojet GaAs n-JFETs Goebel, John H.; Van Rheenen, Arthur D.; Jostad, Leon L.

John H. Goebel and Theodore T. Weber NASA Ames Research CenterMoffett Field, CA Arthur D. van Rheenen University of Minnesota, Department of Electrical Engineering Union St.

E., Get this from a library. Cryogenic measurements of aerojet GaAs n-JFETs. [John H Goebel; Theodore T Weber; Ames Research Center.] Abstract.

The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the lowest noise readings possible and 3) with an extrinsic silicon photodetector at various detector bias voltages, to determine optimum   Cryogenic Measurements of Aerojet GaAs n-JFETs John H.

Goebel and Theodore T. Weber, Ames Research Center, Moffett Field, California September National Aeronautics and Space Administration Ames Research Center Moffett Field, California • The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics.

Attention is given to the optimization of cryogenic CMOS processes for subK applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure GaAs JFET with various gate sizes, which ranges from to micrometers in gate length and from 2 to micrometers in gate width, are fabricated and their DC characteristics and low- frequency noise spectra are measured at low temperatures in order to develop cryogenic electronic circuits for a far-IR detector array on board a satellite such as the Japanese IR :// The cryogenic readout system with GaAs JFETs for multi pixel Proceedings of SPIE (November 04 ) Cryogenic measurements of Aerojet GaAs n-JFETs Proceedings of SPIE (July 01 ) Progress on GaAs cryogenic readout circuits for SISCAM Proceedings of SPIE (June 27 ) Subscribe to Digital :// John H.

Goebel has written: 'Cryogenic measurements of aerojet GaAs n-JFETs' -- subject(s): Low temperature research, Gallium arsenide semiconductors There are P channel and N channel JFETs   A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors.

IEEE Trans on Nuclear Science, Vol. 41, no. 4,pp. – DOI /; Kandiah K.: Random telegraph signal currents and low-frequency noise in junction field effect Most exhibit useable dc characteristics at cryogenic temperatures, although gate leakage and hysteretic effects (presumably due to charge trapping) could be troublesome.

Low-frequency noise (based primarily on grounded-gate measurements) at 4 K is '1/f-like' and for the quietest GaAs FETs appears to be at least as low as the lowest noise values This review paper summarizes and identifies the sources of cryogenic refractive index measurements in the infrared.

Representative refractive index versus temperature and wave-length data are presented for the following materials: germanium, silicon, hot-pressed cadmium telluride (Irtran 6), hot-pressed zinc sulfide (Irtran 2), polycrystalline cadmium telluride, cesium iodide, cesium bromide   As before, all GaAs VETs considered in this paper are n-channel, depletion-mode; all are MESFETs except for two JFETs from Aerojet For reasons explained previously,5 we concentrated on relatively long gate GaAs VETs (1 pm) rather than those designed for microwave frequencies.

Gate sizes are always given as length x width (Lg X Wg). Attention is given to the optimization of cryogenic CMOS processes for subK applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance **Mso called J1.'2 I SPIE Vol.

1 Infrared Detectors and Instrumentation (1 ) Data reported by others for measurements on GaAs FETs at or near liquid-helium temperatures are also included (c) a custom GaAs MESFET made at Hughes (sATo 88),20 and four for two GaAs JFETs made at Aerojet (A5, custom GaAs MESFETs made by TnQuint for the Several families of devices (Si-JFETs, rad-hard MOSFETs, and GaAs MESFETs) have been irradiated and tested at a stable cryogenic temperature up to doses of 55 Mrad of ionizing radiation and up to Cryogenic measurements of aerojet GaAs n-JFETs.

Ben Gable; The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium :// @article{osti_, title = {A low-power-dissipation broadband cryogenic preamplifier utilizing GaAs MESFETs in parallel}, author = {Lee, A T}, abstractNote = {A voltage sensitive preamplifier design is presented for operation at K.

The active device is a Sony 3SK dual-gate GaAs metal-semiconductor field-effect transistor (MESFET), which was chosen for its low-frequency noise Cryogenic measurements of aerojet GaAs n-JFETs.

The measurements indicate that the Aerojet GaAs n-JFET is a quiet and stable device at liquid helium temperatures. and is equal to the best A Schottky barrier diode, shown for example in Figureis based on the formation of a potential barrier by the so called Schottky effect at the interface between a metal such as molybdenum, platinum, chromium or tungsten, and a semiconductor surface such as silicon that is in intimate contact with it.

This phenomenon results in the non-linear current transport across the metal. Evaluation of GaAs FETs for Cryogenic Readout R. K.

Kirschmann, S. V. Lemoff, J. A. Lipa, Proceedings from Conference on Infrared Readout Electronics, Orlando, Florida, SPIE Vol. April, A Method for Simulating a Flux-Locked dc SQUIDPart of the Advances in Cryogenic Engineering book series (ACRE, Noise characteristics of a cryogenically cooled GaAs metal semiconductor field effect transistor at 4 M Hz, Rev.

Sci. Instrum. Pressure measurements in cryogenic systems, in: “Advances in Cryogenic Engineering.,” Vol. 3, Plenum Press, New York (), p. Figure 23a shows the experimental results of the ionization rates for Ge, Si, Sic, and GaN.

Figure 23b shows the measured ionization rates of GaAs and a few other binary and ternary compounds. These results are obtained by using photomultiplication measurements on p-n ://